Microchip APTM50SKM38TG
Manufacturer No:
APTM50SKM38TG
Manufacturer:
Microchip
Package:
SP4
Description:
MOSFET (Metal Oxide) N-Channel Bulk 45m ? @ 45A, 10V ±30V 11200pF @ 25V 246nC @ 10V 500V SP4
Quantity:
In Stock :2656
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Expected Shipping：Sun, Jun 7 - Mon, Jun 8, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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APTM50SKM38TG Information
Microchip APTM50SKM38TG technical specifications, attributes, parameters and parts with similar specifications to Microchip APTM50SKM38TG.
- Type
- Parameter
- Mount
- Chassis Mount, Screw
- Mounting Type
- Chassis Mount
- Package / Case
- SP4
- Number of Pins
- 4
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Bulk
- Published
- 2016
- JESD-609 Code
- e1
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 12
- Terminal Finish
- TIN SILVER COPPER
- Additional Feature
- AVALANCHE RATED
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
- Terminal Form
- UNSPECIFIED
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- unknown
Download datasheets and manufacturer documentation for Microchip APTM50SKM38TG.
APTM50SKM38TG Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 11200pF @ 25V.This device has a continuous drain current (ID) of [90A], which is its maximum continuous current.A maximum pulsed drain current of 360A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
APTM50SKM38TG Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 90A
based on its rated peak drain current 360A.
a 500V drain to source voltage (Vdss)
APTM50SKM38TG Applications
There are a lot of Microsemi Corporation
APTM50SKM38TG applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
