Microchip APTM50DAM38CTG
Manufacturer No:
APTM50DAM38CTG
Manufacturer:
Microchip
Package:
SP4
Description:
MOSFET (Metal Oxide) N-Channel Bulk 45m ? @ 45A, 10V ±30V 11200pF @ 25V 246nC @ 10V 500V SP4
Quantity:
In Stock :1622
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
APTM50DAM38CTG Information
Microchip APTM50DAM38CTG technical specifications, attributes, parameters and parts with similar specifications to Microchip APTM50DAM38CTG.
- Type
- Parameter
- Mount
- Chassis Mount, Screw
- Mounting Type
- Chassis Mount
- Package / Case
- SP4
- Number of Pins
- 4
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Bulk
- Published
- 1997
- JESD-609 Code
- e1
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 12
- Terminal Finish
- TIN SILVER COPPER
- Additional Feature
- AVALANCHE RATED
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
- Terminal Form
- UNSPECIFIED
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- unknown
Download datasheets and manufacturer documentation for Microchip APTM50DAM38CTG.
APTM50DAM38CTG Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 11200pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 90A.Peak drain current for this device is 360A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
APTM50DAM38CTG Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 90A
based on its rated peak drain current 360A.
a 500V drain to source voltage (Vdss)
APTM50DAM38CTG Applications
There are a lot of Microsemi Corporation
APTM50DAM38CTG applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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