APTM20UM04SAG-Microchip-Price, Stock & Datasheet

APTM20UM04SAG Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 3000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 28800pF @ 25V.This device conducts a continuous drain current (ID) of 417A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 88 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 32 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

APTM20UM04SAG Features

the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 417A
the turn-off delay time is 88 ns
a 200V drain to source voltage (Vdss)