APTM20UM03FAG-Microchip-Price, Stock & Datasheet

APTM20UM03FAG Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 43300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 88 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 2320A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 32 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

APTM20UM03FAG Features

the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 580A
the turn-off delay time is 88 ns
based on its rated peak drain current 2320A.
a 200V drain to source voltage (Vdss)