Microchip APTM20SKM10TG
Manufacturer No:
APTM20SKM10TG
Manufacturer:
Microchip
Package:
SP4
Description:
MOSFET (Metal Oxide) N-Channel Bulk 12m ? @ 87.5A, 10V ±30V 13700pF @ 25V 224nC @ 10V 200V SP4
Quantity:
In Stock :9075
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Expected Shipping：Tue, Jun 9 - Wed, Jun 10, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
APTM20SKM10TG Information
Microchip APTM20SKM10TG technical specifications, attributes, parameters and parts with similar specifications to Microchip APTM20SKM10TG.
- Type
- Parameter
- Mount
- Chassis Mount, Screw
- Mounting Type
- Chassis Mount
- Package / Case
- SP4
- Number of Pins
- 4
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Bulk
- Published
- 2016
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 12
- ECCN Code
- EAR99
- Terminal Finish
- MATTE TIN
- Additional Feature
- AVALANCHE RATED
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
- Terminal Form
- UNSPECIFIED
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
Download datasheets and manufacturer documentation for Microchip APTM20SKM10TG.
APTM20SKM10TG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 13700pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 700A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
APTM20SKM10TG Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 175A
based on its rated peak drain current 700A.
a 200V drain to source voltage (Vdss)
APTM20SKM10TG Applications
There are a lot of Microsemi Corporation
APTM20SKM10TG applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
