Microchip APTM20SKM08TG
Manufacturer No:
APTM20SKM08TG
Manufacturer:
Microchip
Package:
SP4
Description:
MOSFET (Metal Oxide) N-Channel Bulk 10m ? @ 104A, 10V ±30V 14400pF @ 25V 280nC @ 10V 200V SP4
Quantity:
In Stock :1292
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Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APTM20SKM08TG Information
Microchip APTM20SKM08TG technical specifications, attributes, parameters and parts with similar specifications to Microchip APTM20SKM08TG.
- Type
- Parameter
- Factory Lead Time
- 36 Weeks
- Mount
- Chassis Mount, Screw
- Mounting Type
- Chassis Mount
- Package / Case
- SP4
- Number of Pins
- 4
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Bulk
- Published
- 2006
- JESD-609 Code
- e3
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 12
- ECCN Code
- EAR99
- Terminal Finish
- MATTE TIN
- Additional Feature
- AVALANCHE RATED
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
Download datasheets and manufacturer documentation for Microchip APTM20SKM08TG.
APTM20SKM08TG Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 14400pF @ 25V.This device has a continuous drain current (ID) of [208A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 88 ns.A maximum pulsed drain current of 832A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 32 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 200V.In order to operate this transistor, a voltage of 200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
APTM20SKM08TG Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 208A
the turn-off delay time is 88 ns
based on its rated peak drain current 832A.
a 200V drain to source voltage (Vdss)
APTM20SKM08TG Applications
There are a lot of Microsemi Corporation
APTM20SKM08TG applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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