Microchip APTM20DAM04G
Manufacturer No:
APTM20DAM04G
Manufacturer:
Microchip
Package:
SP6
Description:
MOSFET (Metal Oxide) N-Channel Bulk 5m ? @ 186A, 10V ±30V 28900pF @ 25V 560nC @ 10V 200V SP6
Quantity:
In Stock :2479
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Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APTM20DAM04G Information
Microchip APTM20DAM04G technical specifications, attributes, parameters and parts with similar specifications to Microchip APTM20DAM04G.
- Type
- Parameter
- Factory Lead Time
- 36 Weeks
- Mount
- Chassis Mount, Screw
- Mounting Type
- Chassis Mount
- Package / Case
- SP6
- Number of Pins
- 6
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Bulk
- Published
- 2012
- JESD-609 Code
- e1
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Terminal Finish
- TIN SILVER COPPER
- Additional Feature
- AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
- Terminal Form
- UNSPECIFIED
Download datasheets and manufacturer documentation for Microchip APTM20DAM04G.
APTM20DAM04G Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 3000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 28900pF @ 25V.This device has a continuous drain current (ID) of [372A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 88 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 32 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 200V.In order to operate this transistor, a voltage of 200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
APTM20DAM04G Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 372A
the turn-off delay time is 88 ns
a 200V drain to source voltage (Vdss)
APTM20DAM04G Applications
There are a lot of Microsemi Corporation
APTM20DAM04G applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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