Microchip APTM120UM70DAG
Manufacturer No:
APTM120UM70DAG
Manufacturer:
Microchip
Package:
SP6
Description:
MOSFET (Metal Oxide) N-Channel Bulk 80m ? @ 85.5A, 10V ±30V 43500pF @ 25V 1650nC @ 10V 1200V SP6
Quantity:
In Stock :8377
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APTM120UM70DAG Information
Microchip APTM120UM70DAG technical specifications, attributes, parameters and parts with similar specifications to Microchip APTM120UM70DAG.
- Type
- Parameter
- Factory Lead Time
- 36 Weeks
- Mount
- Chassis Mount, Screw
- Mounting Type
- Chassis Mount
- Package / Case
- SP6
- Number of Pins
- 6
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Bulk
- Published
- 1999
- JESD-609 Code
- e1
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- TIN SILVER COPPER
- Additional Feature
- AVALANCHE RATED
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
- Terminal Form
- UNSPECIFIED
Download datasheets and manufacturer documentation for Microchip APTM120UM70DAG.
APTM120UM70DAG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3200 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 43500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 245 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The transistor must receive a 1200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
APTM120UM70DAG Features
the avalanche energy rating (Eas) is 3200 mJ
a continuous drain current (ID) of 171A
the turn-off delay time is 245 ns
a 1200V drain to source voltage (Vdss)
APTM120UM70DAG Applications
There are a lot of Microsemi Corporation
APTM120UM70DAG applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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