Microchip APTM120U10SAG
Manufacturer No:
APTM120U10SAG
Manufacturer:
Microchip
Package:
SP6
Description:
MOSFET (Metal Oxide) N-Channel Bulk 120m ? @ 58A, 10V ±30V 28900pF @ 25V 1100nC @ 10V 1200V SP6
Quantity:
In Stock :1124
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APTM120U10SAG Information
Microchip APTM120U10SAG technical specifications, attributes, parameters and parts with similar specifications to Microchip APTM120U10SAG.
- Type
- Parameter
- Factory Lead Time
- 36 Weeks
- Mount
- Chassis Mount, Screw
- Mounting Type
- Chassis Mount
- Package / Case
- SP6
- Number of Pins
- 6
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Bulk
- Published
- 1999
- JESD-609 Code
- e1
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Terminal Finish
- TIN SILVER COPPER
- Additional Feature
- AVALANCHE RATED
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
- Terminal Form
- UNSPECIFIED
Download datasheets and manufacturer documentation for Microchip APTM120U10SAG.
APTM120U10SAG Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3200 mJ.A device's maximal input capacitance is 28900pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 116A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 245 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 1200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
APTM120U10SAG Features
the avalanche energy rating (Eas) is 3200 mJ
a continuous drain current (ID) of 116A
the turn-off delay time is 245 ns
a 1200V drain to source voltage (Vdss)
APTM120U10SAG Applications
There are a lot of Microsemi Corporation
APTM120U10SAG applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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