Microchip APTM120DA56T1G
Manufacturer No:
APTM120DA56T1G
Manufacturer:
Microchip
Package:
SP1
Description:
MOSFET (Metal Oxide) N-Channel Bulk 672m ? @ 14A, 10V ±30V 7736pF @ 25V 300nC @ 10V 1200V SP1
Quantity:
In Stock :7192
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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APTM120DA56T1G Information
Microchip APTM120DA56T1G technical specifications, attributes, parameters and parts with similar specifications to Microchip APTM120DA56T1G.
- Type
- Parameter
- Mount
- Chassis Mount, Screw
- Mounting Type
- Chassis Mount
- Package / Case
- SP1
- Number of Pins
- 1
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Bulk
- Published
- 2016
- JESD-609 Code
- e1
- Pbfree Code
- yes
- Type
- Parameter
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 12
- ECCN Code
- EAR99
- Terminal Finish
- TIN SILVER COPPER
- Additional Feature
- AVALANCHE RATED
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
- Terminal Form
- UNSPECIFIED
Download datasheets and manufacturer documentation for Microchip APTM120DA56T1G.
APTM120DA56T1G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7736pF @ 25V.This device conducts a continuous drain current (ID) of 18A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 170 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 50 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.This transistor requires a drain-source voltage (Vdss) of 1200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APTM120DA56T1G Features
a continuous drain current (ID) of 18A
the turn-off delay time is 170 ns
a 1200V drain to source voltage (Vdss)
APTM120DA56T1G Applications
There are a lot of Microsemi Corporation
APTM120DA56T1G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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