Microchip APTM120DA29TG
Manufacturer No:
APTM120DA29TG
Manufacturer:
Microchip
Package:
SP4
Description:
MOSFET (Metal Oxide) N-Channel Bulk 348m ? @ 17A, 10V ±30V 10300pF @ 25V 374nC @ 10V 1200V SP4
Quantity:
In Stock :1496
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
APTM120DA29TG Information
Microchip APTM120DA29TG technical specifications, attributes, parameters and parts with similar specifications to Microchip APTM120DA29TG.
- Type
- Parameter
- Mount
- Chassis Mount, Screw
- Mounting Type
- Chassis Mount
- Package / Case
- SP4
- Number of Pins
- 4
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Bulk
- Published
- 2016
- JESD-609 Code
- e1
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 12
- Terminal Finish
- TIN SILVER COPPER
- Additional Feature
- AVALANCHE RATED
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
- Terminal Form
- UNSPECIFIED
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- unknown
Download datasheets and manufacturer documentation for Microchip APTM120DA29TG.
APTM120DA29TG Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 10300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 34A, which represents the maximum continuous current it can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 1200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
APTM120DA29TG Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 34A
a 1200V drain to source voltage (Vdss)
APTM120DA29TG Applications
There are a lot of Microsemi Corporation
APTM120DA29TG applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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In-stock SKU
15,000+
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