Microchip APTM100UM65SCAVG
Manufacturer No:
APTM100UM65SCAVG
Manufacturer:
Microchip
Package:
Module
Description:
MOSFET (Metal Oxide) N-Channel Bulk 78m ? @ 72.5A, 10V ±30V 28500pF @ 25V 1068nC @ 10V 1000V Module
Quantity:
In Stock :3669
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Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APTM100UM65SCAVG Information
Microchip APTM100UM65SCAVG technical specifications, attributes, parameters and parts with similar specifications to Microchip APTM100UM65SCAVG.
- Type
- Parameter
- Lifecycle Status
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Mount
- Chassis Mount, Screw
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Number of Pins
- 5
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Bulk
- Series
- POWER MOS 7®
- Published
- 1997
- Type
- Parameter
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Additional Feature
- AVALANCHE RATED
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
- Terminal Form
- UNSPECIFIED
- Pin Count
- 5
- Number of Elements
- 1
Download datasheets and manufacturer documentation for Microchip APTM100UM65SCAVG.
APTM100UM65SCAVG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3200 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 28500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 140 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 18 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
APTM100UM65SCAVG Features
the avalanche energy rating (Eas) is 3200 mJ
a continuous drain current (ID) of 145A
the turn-off delay time is 140 ns
a 1000V drain to source voltage (Vdss)
APTM100UM65SCAVG Applications
There are a lot of Microsemi Corporation
APTM100UM65SCAVG applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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