Microchip APTM100UM65SAG
Manufacturer No:
APTM100UM65SAG
Manufacturer:
Microchip
Package:
SP6
Description:
MOSFET (Metal Oxide) N-Channel Bulk 78m ? @ 72.5A, 10V ±30V 28500pF @ 25V 1068nC @ 10V 1000V SP6
Quantity:
In Stock :1574
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Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APTM100UM65SAG Information
Microchip APTM100UM65SAG technical specifications, attributes, parameters and parts with similar specifications to Microchip APTM100UM65SAG.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Chassis Mount, Screw
- Mounting Type
- Chassis Mount
- Package / Case
- SP6
- Number of Pins
- 6
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Bulk
- Published
- 1999
- JESD-609 Code
- e1
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Finish
- TIN SILVER COPPER
- Additional Feature
- AVALANCHE RATED
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
- Terminal Form
- UNSPECIFIED
Download datasheets and manufacturer documentation for Microchip APTM100UM65SAG.
APTM100UM65SAG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3200 mJ.A device's maximum input capacitance is 28500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 145A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 140 ns.Its maximum pulsed drain current is 580A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APTM100UM65SAG Features
the avalanche energy rating (Eas) is 3200 mJ
a continuous drain current (ID) of 145A
the turn-off delay time is 140 ns
based on its rated peak drain current 580A.
a 1000V drain to source voltage (Vdss)
APTM100UM65SAG Applications
There are a lot of Microsemi Corporation
APTM100UM65SAG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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