Microchip APTM100UM45DAG
Manufacturer No:
APTM100UM45DAG
Manufacturer:
Microchip
Package:
SP6
Description:
MOSFET (Metal Oxide) N-Channel Bulk 52m ? @ 107.5A, 10V ±30V 42700pF @ 25V 1602nC @ 10V 1000V SP6
Quantity:
In Stock :8248
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Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APTM100UM45DAG Information
Microchip APTM100UM45DAG technical specifications, attributes, parameters and parts with similar specifications to Microchip APTM100UM45DAG.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Chassis Mount, Screw
- Mounting Type
- Chassis Mount
- Package / Case
- SP6
- Number of Pins
- 6
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Bulk
- Series
- POWER MOS 7®
- Published
- 1999
- Type
- Parameter
- JESD-609 Code
- e1
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Terminal Finish
- TIN SILVER COPPER
- Additional Feature
- AVALANCHE RATED
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
Download datasheets and manufacturer documentation for Microchip APTM100UM45DAG.
APTM100UM45DAG Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3200 mJ.The maximum input capacitance of this device is 42700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 215A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 140 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 18 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
APTM100UM45DAG Features
the avalanche energy rating (Eas) is 3200 mJ
a continuous drain current (ID) of 215A
the turn-off delay time is 140 ns
a 1000V drain to source voltage (Vdss)
APTM100UM45DAG Applications
There are a lot of Microsemi Corporation
APTM100UM45DAG applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
