Microchip APTM100U13SG
Manufacturer No:
APTM100U13SG
Manufacturer:
Microchip
Package:
J3 Module
Description:
MOSFET (Metal Oxide) N-Channel Bulk 145m ? @ 32.5A, 10V ±30V 31600pF @ 25V 2000nC @ 10V 1000V J3 Module
Quantity:
In Stock :2167
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Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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APTM100U13SG Information
Microchip APTM100U13SG technical specifications, attributes, parameters and parts with similar specifications to Microchip APTM100U13SG.
- Type
- Parameter
- Mount
- Chassis Mount
- Mounting Type
- Chassis Mount
- Package / Case
- J3 Module
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Bulk
- Published
- 2005
- JESD-609 Code
- e1
- Pbfree Code
- yes
- Part Status
- Discontinued
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- Terminal Finish
- TIN SILVER COPPER
- Additional Feature
- AVALANCHE RATED
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
- Terminal Form
- UNSPECIFIED
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- unknown
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
Download datasheets and manufacturer documentation for Microchip APTM100U13SG.
APTM100U13SG Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 31600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 65A amps.As far as peak drain current is concerned, its maximum pulsed current is 260A.The DS breakdown voltage should be maintained above 1000V to maintain normal operation.To operate this transistor, you will need a 1000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
APTM100U13SG Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 65A
based on its rated peak drain current 260A.
a 1000V drain to source voltage (Vdss)
APTM100U13SG Applications
There are a lot of Microsemi Corporation
APTM100U13SG applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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