Microchip APTM100DAM90G
Manufacturer No:
APTM100DAM90G
Manufacturer:
Microchip
Package:
SP6
Description:
MOSFET (Metal Oxide) N-Channel Bulk 105m ? @ 39A, 10V ±30V 20700pF @ 25V 744nC @ 10V 1000V SP6
Quantity:
In Stock :3976
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Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APTM100DAM90G Information
Microchip APTM100DAM90G technical specifications, attributes, parameters and parts with similar specifications to Microchip APTM100DAM90G.
- Type
- Parameter
- Factory Lead Time
- 36 Weeks
- Mount
- Chassis Mount, Screw
- Mounting Type
- Chassis Mount
- Package / Case
- SP6
- Number of Pins
- 6
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Bulk
- Published
- 2012
- JESD-609 Code
- e1
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 5
- ECCN Code
- EAR99
- Terminal Finish
- TIN SILVER COPPER
- Additional Feature
- AVALANCHE RATED
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
- Terminal Form
- UNSPECIFIED
Download datasheets and manufacturer documentation for Microchip APTM100DAM90G.
APTM100DAM90G Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 20700pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 78A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 155 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 18 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 1000V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
APTM100DAM90G Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 78A
the turn-off delay time is 155 ns
a 1000V drain to source voltage (Vdss)
APTM100DAM90G Applications
There are a lot of Microsemi Corporation
APTM100DAM90G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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