Microchip APTC90DAM60CT1G
Manufacturer No:
APTC90DAM60CT1G
Manufacturer:
Microchip
Package:
SP1
Description:
MOSFET (Metal Oxide) N-Channel Bulk 60m ? @ 52A, 10V ±20V 13600pF @ 100V 540nC @ 10V 900V SP1
Quantity:
In Stock :5538
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Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APTC90DAM60CT1G Information
Microchip APTC90DAM60CT1G technical specifications, attributes, parameters and parts with similar specifications to Microchip APTC90DAM60CT1G.
- Type
- Parameter
- Mount
- Chassis Mount, Screw
- Mounting Type
- Chassis Mount
- Package / Case
- SP1
- Number of Pins
- 1
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Bulk
- Series
- CoolMOS?
- Published
- 1997
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 10
- ECCN Code
- EAR99
- Additional Feature
- AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
- Terminal Form
- UNSPECIFIED
- Pin Count
- 12
- Number of Elements
- 1
Download datasheets and manufacturer documentation for Microchip APTC90DAM60CT1G.
APTC90DAM60CT1G Overview
A device's maximum input capacitance is 13600pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 59A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 400 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 70 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 900V.To operate this transistor, you need to apply a 900V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APTC90DAM60CT1G Features
a continuous drain current (ID) of 59A
the turn-off delay time is 400 ns
a 900V drain to source voltage (Vdss)
APTC90DAM60CT1G Applications
There are a lot of Microsemi Corporation
APTC90DAM60CT1G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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