Microchip APTC80DA15T1G
Manufacturer No:
APTC80DA15T1G
Manufacturer:
Microchip
Package:
SP1
Description:
MOSFET (Metal Oxide) N-Channel Bulk 150m ? @ 14A, 10V ±30V 4507pF @ 25V 180nC @ 10V 800V SP1
Quantity:
In Stock :4413
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Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APTC80DA15T1G Information
Microchip APTC80DA15T1G technical specifications, attributes, parameters and parts with similar specifications to Microchip APTC80DA15T1G.
- Type
- Parameter
- Mount
- Chassis Mount, Screw
- Mounting Type
- Chassis Mount
- Package / Case
- SP1
- Number of Pins
- 1
- Transistor Element Material
- SILICON
- Operating Temperature
- -40°C~150°C TJ
- Packaging
- Bulk
- Published
- 2007
- JESD-609 Code
- e1
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 12
- Terminal Finish
- TIN SILVER COPPER
- Additional Feature
- AVALANCHE RATED
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
- Terminal Form
- UNSPECIFIED
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- unknown
Download datasheets and manufacturer documentation for Microchip APTC80DA15T1G.
APTC80DA15T1G Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 670 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4507pF @ 25V.This device conducts a continuous drain current (ID) of 28A, which is the maximum continuous current transistor can conduct.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 800V.This transistor requires a drain-source voltage (Vdss) of 800V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APTC80DA15T1G Features
the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 28A
a 800V drain to source voltage (Vdss)
APTC80DA15T1G Applications
There are a lot of Microsemi Corporation
APTC80DA15T1G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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12.28 M
Listed Part Number
3,000+
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In-stock SKU
15,000+
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