Microchip APT8M80K
Manufacturer No:
APT8M80K
Manufacturer:
Microchip
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 1.35 ? @ 4A, 10V ±30V 1335pF @ 25V 43nC @ 10V TO-220-3
Quantity:
In Stock :1712
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Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APT8M80K Information
Microchip APT8M80K technical specifications, attributes, parameters and parts with similar specifications to Microchip APT8M80K.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Weight
- 6.000006g
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- POWER MOS 8?
- Published
- 2009
- JESD-609 Code
- e1
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- TIN SILVER COPPER
- Additional Feature
- FAST SWITCHING, AVALANCHE RATED
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 800V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
Download datasheets and manufacturer documentation for Microchip APT8M80K.
APT8M80K Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 285 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1335pF @ 25V.This device has a continuous drain current (ID) of [8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.A device's drain current is its maximum continuous current, and this device's drain current is 45A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.A maximum pulsed drain current of 25A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Its overall power consumption can be reduced by using drive voltage (10V).
APT8M80K Features
the avalanche energy rating (Eas) is 285 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 33 ns
based on its rated peak drain current 25A.
APT8M80K Applications
There are a lot of Microsemi Corporation
APT8M80K applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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