Microchip APT60M80JVR
Manufacturer No:
APT60M80JVR
Manufacturer:
Microchip
Package:
SOT-227-4, miniBLOC
Description:
MOSFET (Metal Oxide) N-Channel Tube 80m ? @ 500mA, 10V ±30V 14500pF @ 25V 870nC @ 10V SOT-227-4, miniBLOC
Quantity:
In Stock :5229
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Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APT60M80JVR Information
Microchip APT60M80JVR technical specifications, attributes, parameters and parts with similar specifications to Microchip APT60M80JVR.
- Type
- Parameter
- Mount
- Chassis Mount, Screw
- Mounting Type
- Chassis Mount
- Package / Case
- SOT-227-4, miniBLOC
- Number of Pins
- 4
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- POWER MOS V®
- Published
- 1997
- JESD-609 Code
- e1
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- Terminal Finish
- Tin/Silver/Copper (Sn/Ag/Cu)
- Subcategory
- FET General Purpose Power
- Voltage - Rated DC
- 600V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
- Terminal Form
- UNSPECIFIED
Download datasheets and manufacturer documentation for Microchip APT60M80JVR.
Datasheets:
APT60M80JVR Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3200 mJ.A device's maximum input capacitance is 14500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 55A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 73 ns.Its maximum pulsed drain current is 220A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT60M80JVR Features
the avalanche energy rating (Eas) is 3200 mJ
a continuous drain current (ID) of 55A
the turn-off delay time is 73 ns
based on its rated peak drain current 220A.
APT60M80JVR Applications
There are a lot of Microsemi Corporation
APT60M80JVR applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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