Microchip APT5010JVRU3
Manufacturer No:
APT5010JVRU3
Manufacturer:
Microchip
Package:
SOT-227-4, miniBLOC
Description:
MOSFET (Metal Oxide) N-Channel Bulk 100m ? @ 22A, 10V ±30V 7410pF @ 25V 312nC @ 10V 500V SOT-227-4, miniBLOC
Quantity:
In Stock :6760
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Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APT5010JVRU3 Information
Microchip APT5010JVRU3 technical specifications, attributes, parameters and parts with similar specifications to Microchip APT5010JVRU3.
- Type
- Parameter
- Factory Lead Time
- 36 Weeks
- Mount
- Chassis Mount, Screw
- Mounting Type
- Chassis Mount
- Package / Case
- SOT-227-4, miniBLOC
- Number of Pins
- 4
- Weight
- 30.000004g
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Bulk
- Published
- 2006
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Additional Feature
- AVALANCHE RATED
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- UPPER
- Terminal Form
- UNSPECIFIED
Download datasheets and manufacturer documentation for Microchip APT5010JVRU3.
APT5010JVRU3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 2500 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 7410pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 44A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 54 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
APT5010JVRU3 Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
the turn-off delay time is 54 ns
a 500V drain to source voltage (Vdss)
APT5010JVRU3 Applications
There are a lot of Microsemi Corporation
APT5010JVRU3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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