Microchip APT30M61BLLG
Manufacturer No:
APT30M61BLLG
Manufacturer:
Microchip
Package:
Description:
300V MOSFET
Quantity:
In Stock :5840
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Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APT30M61BLLG Information
Microchip APT30M61BLLG technical specifications, attributes, parameters and parts with similar specifications to Microchip APT30M61BLLG.
- Type
- Parameter
- product_type
- Silicon Discrete MOSFET
- Drain Source Voltage Max V (volt)
- 300
- Continuous Drain Current Max (Ampere)
- 40 - 130
- On-State Resistance (milliohms) [max] (mΩ)
- 19 - 85
- Package Type
- D3PAK, SOT-227, T-MAX, TO-247, TO-264
- Type
- Parameter
Download datasheets and manufacturer documentation for Microchip APT30M61BLLG.
Application Notes:
Data Sheets:
Other Brochures:
Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement
mode power MOSFETS. Both conduction and switching losses are addressed with
Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines
lower conduction and switching losses along with exceptionally fast switching
speeds.
Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is extremely low internal chip equivalent gate resistances (EGR) that are up to an order of magnitude lower than competitive devices which enables uniform high speed switching across the entire chip.
Body Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not needed, MOSFET versions are available.
Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is extremely low internal chip equivalent gate resistances (EGR) that are up to an order of magnitude lower than competitive devices which enables uniform high speed switching across the entire chip.
Body Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not needed, MOSFET versions are available.
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12.28 M
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