Microchip APT28M120B2
Manufacturer No:
APT28M120B2
Manufacturer:
Microchip
Package:
TO-247-3 Variant
Description:
1200V MOSFET
Quantity:
In Stock :4231
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
APT28M120B2 Information
Microchip APT28M120B2 technical specifications, attributes, parameters and parts with similar specifications to Microchip APT28M120B2.
- Type
- Parameter
- product_type
- Silicon Discrete MOSFET
- Drain Source Voltage Max V (volt)
- 1200
- Continuous Drain Current Max (Ampere)
- 5 - 35
- On-State Resistance (milliohms) [max] (mΩ)
- 290 - 3800
- Package Type
- D3PAK, SOT-227, T-MAX, TO-220, TO-247, TO-264
- Type
- Parameter
Download datasheets and manufacturer documentation for Microchip APT28M120B2.
Application Notes:
Data Sheets:
Other Brochures:
Power MOS 7®is a family of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7®combines lower conduction and switching lossesalong with exceptionally fast switching speeds
- Power Semiconductors, Power Modules and RF Power MOSFETs Catalog
- Eliminating Parasitic Oscillation between Parallel MOSFETs
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- Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC
- Introduction to MOSFETs
- Latest Technology PT IGBTs vs. Power MOSFETs
- Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets
- Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in SMPS Circuits
- Turn Off Snubber Design for High Frequency Modules
- VDS(on) VCE(sat) Measurement
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