Microchip APT20M22B2VRG
Manufacturer No:
APT20M22B2VRG
Manufacturer:
Microchip
Package:
TO-247-3 Variant
Description:
MOSFET (Metal Oxide) N-Channel Tube 22m ? @ 500mA, 10V ±30V 10200pF @ 25V 435nC @ 10V TO-247-3 Variant
Quantity:
In Stock :1375
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Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APT20M22B2VRG Information
Microchip APT20M22B2VRG technical specifications, attributes, parameters and parts with similar specifications to Microchip APT20M22B2VRG.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3 Variant
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- POWER MOS V®
- Published
- 1997
- JESD-609 Code
- e1
- Type
- Parameter
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- TIN SILVER COPPER
- Voltage - Rated DC
- 200V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Current Rating
- 75A
Download datasheets and manufacturer documentation for Microchip APT20M22B2VRG.
APT20M22B2VRG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.A device's maximum input capacitance is 10200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 48 ns.Its maximum pulsed drain current is 400A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT20M22B2VRG Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 48 ns
based on its rated peak drain current 400A.
APT20M22B2VRG Applications
There are a lot of Microsemi Corporation
APT20M22B2VRG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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12.28 M
Listed Part Number
3,000+
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