Microchip APT20M11JVFR
Manufacturer No:
APT20M11JVFR
Manufacturer:
Microchip
Package:
SOT-227-4, miniBLOC
Description:
200V FREDFET
Quantity:
In Stock :4087
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
APT20M11JVFR Information
Microchip APT20M11JVFR technical specifications, attributes, parameters and parts with similar specifications to Microchip APT20M11JVFR.
- Type
- Parameter
- product_type
- Silicon Discrete MOSFET
- Drain Source Voltage Max V (volt)
- 200
- Continuous Drain Current Max (Ampere)
- 56 - 176
- On-State Resistance (milliohms) [max] (mΩ)
- 11 - 45
- Package Type
- D3PAK, SOT-227, T-MAX, TO-247, TO-264
- Type
- Parameter
Download datasheets and manufacturer documentation for Microchip APT20M11JVFR.
Data Sheets:
Other Brochures:
Application Notes:
Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement
mode power MOSFETS. Both conduction and switching losses are addressed with
Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines
lower conduction and switching losses along with exceptionally fast switching
speeds.
Power MOS V® can still provide the best trade-off between performance and
cost in some applications. Power MOS V® utilizes a low resistance aluminum
metal gate structure. This allows for faster gate signal propagation than is
possible with conventional polysilicon gate structures. The result is extremely
low internal chip equivalent gate resistances (EGR) that are up to an order of
magnitude lower than competitive devices which enables uniform high speed
switching across the entire chip.
Body Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a
MOSFET with a faster recovery intrinsic body diode. This results in improved
reliability in ZVS circuits due to shorter minority carrier lifetime and
increased commutation dv/dt ruggedness. If a fast recovery body diode is not
needed, MOSFET versions are available.
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