Microchip APT11N80KC3G
Manufacturer No:
APT11N80KC3G
Manufacturer:
Microchip
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 450m ? @ 7.1A, 10V ±20V 1585pF @ 25V 60nC @ 10V TO-220-3
Quantity:
In Stock :6195
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APT11N80KC3G Information
Microchip APT11N80KC3G technical specifications, attributes, parameters and parts with similar specifications to Microchip APT11N80KC3G.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Number of Pins
- 3
- Weight
- 6.000006g
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- CoolMOS?
- Published
- 2012
- Type
- Parameter
- JESD-609 Code
- e1
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- TIN SILVER COPPER
- Voltage - Rated DC
- 800V
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
Download datasheets and manufacturer documentation for Microchip APT11N80KC3G.
APT11N80KC3G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 470 mJ.A device's maximum input capacitance is 1585pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 11A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT11N80KC3G Features
the avalanche energy rating (Eas) is 470 mJ
a continuous drain current (ID) of 11A
the turn-off delay time is 70 ns
APT11N80KC3G Applications
There are a lot of Microsemi Corporation
APT11N80KC3G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
