Microchip APT10M19BVRG

Manufacturer No:

APT10M19BVRG

Manufacturer:

Microchip

Package:

TO-247-3

Description:

100V MOSFET

Quantity:

In Stock :8851

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

APT10M19BVRG Information

Microchip APT10M19BVRG technical specifications, attributes, parameters and parts with similar specifications to Microchip APT10M19BVRG.

Type
Parameter

product_type
Silicon Discrete MOSFET

Drain Source Voltage Max V (volt)
100

Continuous Drain Current Max (Ampere)
75 - 100

On-State Resistance (milliohms) [max] (mΩ)
11 - 25

Package Type
D3PAK, TO-247, TO-264

Type
Parameter

Download datasheets and manufacturer documentation for Microchip APT10M19BVRG.

Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is extremely low internal chip equivalent gate resistances (EGR) that are up to an order of magnitude lower than competitive devices which enables uniform high speed switching across the entire chip.

Body Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not needed, MOSFET versions are available.