Microchip APT10M07JVFR
Manufacturer No:
APT10M07JVFR
Manufacturer:
Microchip
Package:
SOT-227-4, miniBLOC
Description:
100V FREDFET
Quantity:
In Stock :2554
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Shipped from：HK Warehouse
Expected Shipping：Wed, Jun 3 - Thu, Jun 4, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APT10M07JVFR Information
Microchip APT10M07JVFR technical specifications, attributes, parameters and parts with similar specifications to Microchip APT10M07JVFR.
- Type
- Parameter
- product_type
- Silicon Discrete MOSFET
- Drain Source Voltage Max V (volt)
- 100
- Continuous Drain Current Max (Ampere)
- 75 - 225
- On-State Resistance (milliohms) [max] (mΩ)
- 7 - 19
- Package Type
- D3PAK, SOT-227, TO-264
- Type
- Parameter
Download datasheets and manufacturer documentation for Microchip APT10M07JVFR.
Application Notes:
Data Sheets:
Other Brochures:
Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is extremely low internal chip equivalent gate resistances (EGR) that are up to an order of magnitude lower than competitive devices which enables uniform high speed switching across the entire chip.
Body
Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a
MOSFET with a faster recovery intrinsic body diode. This results in improved
reliability in ZVS circuits due to shorter minority carrier lifetime and
increased commutation dv/dt ruggedness. If a fast recovery body diode is not
needed, MOSFET versions are available.
- Class D amplifiers up to 2MHz
- High voltage pulsed DC
- AM transmitters
- Plasma deposition/etch
- Series Gate Resistance (Rg) <0.1 ohm
- Tr and Tf times of <10ns
- Industry's Lowest Gate Charge
- Fast switching, uniform signal propagation
- Pulse power applications
- Fast switching, reduced gate drive power
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