Microchip APT10035B2FLLG
Manufacturer No:
APT10035B2FLLG
Manufacturer:
Microchip
Package:
TO-247-3 Variant
Description:
1000V FREDFET
Quantity:
In Stock :1200
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Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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APT10035B2FLLG Information
Microchip APT10035B2FLLG technical specifications, attributes, parameters and parts with similar specifications to Microchip APT10035B2FLLG.
- Type
- Parameter
- product_type
- Silicon Discrete MOSFET
- Drain Source Voltage Max V (volt)
- 1000
- Continuous Drain Current Max (Ampere)
- 4 - 42
- On-State Resistance (milliohms) [max] (mΩ)
- 200 - 3000
- Package Type
- D3PAK, SOT-227, T-MAX, TO-247, TO-264, TO-264 MAX
- Type
- Parameter
Download datasheets and manufacturer documentation for Microchip APT10035B2FLLG.
Data Sheets:
Other Brochures:
Application Notes:
Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high frequency, high voltage applications rated above 500 W.
The Power MOS 8™ series is a result of extensive research into quiet switching. Input and reverse transfer capacitance values as well as their ratio were set at specific values to achieve quiet switching with minimal switching loss. The Power MOS 8™ series of devices are inherently quiet switching, stable when connected in parallel, very efficient, and lower cost than previous
generations.
Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds.
Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is extremely low internal chip equivalent gate resistances (EGR) that are up to an order of
magnitude lower than competitive devices which enables uniform high speed switching across the entire chip.
Body Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not needed, MOSFET versions are available.
The Power MOS 8™ series is a result of extensive research into quiet switching. Input and reverse transfer capacitance values as well as their ratio were set at specific values to achieve quiet switching with minimal switching loss. The Power MOS 8™ series of devices are inherently quiet switching, stable when connected in parallel, very efficient, and lower cost than previous
generations.
Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds.
Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with conventional polysilicon gate structures. The result is extremely low internal chip equivalent gate resistances (EGR) that are up to an order of
magnitude lower than competitive devices which enables uniform high speed switching across the entire chip.
Body Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not needed, MOSFET versions are available.
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