Microchip APL502B2G
Manufacturer No:
APL502B2G
Manufacturer:
Microchip
Package:
TO-247-3 Variant
Description:
500V Linear MOSFET
Quantity:
In Stock :9293
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Expected Shipping：Sat, May 30 - Sun, May 31, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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APL502B2G Information
Microchip APL502B2G technical specifications, attributes, parameters and parts with similar specifications to Microchip APL502B2G.
- Type
- Parameter
- product_type
- Silicon Discrete MOSFET
- Drain Source Voltage Max V (volt)
- 500
- Continuous Drain Current Max (Ampere)
- 43 - 58
- On-State Resistance (milliohms) [max] (mΩ)
- 90-120
- Package Type
- SOT-227, T-MAX, TO-264
- Type
- Parameter
Download datasheets and manufacturer documentation for Microchip APL502B2G.
Application Notes:
Data Sheets:
Other Brochures:
What is a Linear MOSFET?
A MOSFET specifically designed to be more robust than a standard MOSFET when operated with both high voltage and high current near DC conditions (>100 msecs).
The Problem with SMPS MOSFETs
MOSFETs optimized for high-frequency SMPS applications have poor high voltage DC SOA. Most SMPS-type MOSFETs overstate SOA capability at high voltage on the datasheets. Above ~30V and DC conditions, SOA drops faster than is indicated by Power Dissipation (PD) limited operation. For pulsed loads (t <10 ms), there is generally no problem using a standard MOSFET.
Technology Innovation
Introduced in 1999, Microchip modified its proprietary patented self-aligned metal gate MOSFET technology for enhanced performance in high voltage, linear applications. These linear MOSFETs typically provide 1.5–2.0 times the DC SOA capability at high voltage compared to other MOSFET technologies optimized for switching applications.
High Current and > 200 V > 100 msec Used as a variable power resistor Soft start application (limit surge currents) Linear amplifier circuit Active loads above 200 volts such as DC dynamic loads for testing power supplies, batteries, fuel cells, etc. High voltage, high current constant current sources.
A MOSFET specifically designed to be more robust than a standard MOSFET when operated with both high voltage and high current near DC conditions (>100 msecs).
The Problem with SMPS MOSFETs
MOSFETs optimized for high-frequency SMPS applications have poor high voltage DC SOA. Most SMPS-type MOSFETs overstate SOA capability at high voltage on the datasheets. Above ~30V and DC conditions, SOA drops faster than is indicated by Power Dissipation (PD) limited operation. For pulsed loads (t <10 ms), there is generally no problem using a standard MOSFET.
Technology Innovation
Introduced in 1999, Microchip modified its proprietary patented self-aligned metal gate MOSFET technology for enhanced performance in high voltage, linear applications. These linear MOSFETs typically provide 1.5–2.0 times the DC SOA capability at high voltage compared to other MOSFET technologies optimized for switching applications.
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