

AOS AOD442
Manufacturer No:
AOD442
Manufacturer:
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 20m ? @ 20A, 10V ±20V 2300pF @ 30V 68nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
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AOD442 information
AOS AOD442 technical specifications, attributes, parameters and parts with similar specifications to AOS AOD442.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2009
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 2.1W Ta 60W Tc
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 60W
- Case Connection
- DRAIN
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Vgs(th) (Max) @ Id
- 2.7V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 2300pF @ 30V
- Current - Continuous Drain (Id) @ 25°C
- 7A Ta 37A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 68nC @ 10V
- Drain to Source Voltage (Vdss)
- 60V
- Drive Voltage (Max Rds On,Min Rds On)
- 4.5V 10V
- Vgs (Max)
- ±20V
- Continuous Drain Current (ID)
- 37A
- Gate to Source Voltage (Vgs)
- 20V
- Drain-source On Resistance-Max
- 0.025Ohm
- Pulsed Drain Current-Max (IDM)
- 60A
- DS Breakdown Voltage-Min
- 60V
- Avalanche Energy Rating (Eas)
- 45 mJ
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for AOS AOD442.
AOD442 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 45 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2300pF @ 30V.This device conducts a continuous drain current (ID) of 37A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 60A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
AOD442 Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 37A
based on its rated peak drain current 60A.
a 60V drain to source voltage (Vdss)
AOD442 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOD442 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
User Guide
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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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