AOS AOD11S60
AOS AOD11S60

AOS AOD11S60

Manufacturer No:

AOD11S60

Manufacturer:

AOS

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 399m ? @ 3.8A, 10V ±30V 545pF @ 100V 11nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

Price not displayed? Please send an RFQ, and we will respond immediately.

AOD11S60 information

AOS AOD11S60 technical specifications, attributes, parameters and parts with similar specifications to AOS AOD11S60.

  • Type
  • Parameter
  • Factory Lead Time
  • 16 Weeks
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Series
  • aMOS?
  • Published
  • 2011
  • JESD-609 Code
  • e3
  • Pbfree Code
  • yes
  • Part Status
  • Not For New Designs
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • Terminal Finish
  • Tin (Sn)
  • Technology
  • MOSFET (Metal Oxide)
  • Terminal Position
  • SINGLE
  • Terminal Form
  • GULL WING
  • Peak Reflow Temperature (Cel)
  • NOT SPECIFIED
  • Reach Compliance Code
  • not_compliant
  • Time@Peak Reflow Temperature-Max (s)
  • NOT SPECIFIED
  • Pin Count
  • 3
  • JESD-30 Code
  • R-PSSO-G3
  • Number of Elements
  • 1
  • Power Dissipation-Max
  • 208W Tc
  • Operating Mode
  • ENHANCEMENT MODE
  • Power Dissipation
  • 208W
  • Case Connection
  • DRAIN
  • FET Type
  • N-Channel
  • Transistor Application
  • SWITCHING
  • Rds On (Max) @ Id, Vgs
  • 399m ? @ 3.8A, 10V
  • Vgs(th) (Max) @ Id
  • 4.1V @ 250?A
  • Input Capacitance (Ciss) (Max) @ Vds
  • 545pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
  • 11A Tc
  • Gate Charge (Qg) (Max) @ Vgs
  • 11nC @ 10V
  • Drain to Source Voltage (Vdss)
  • 600V
  • Drive Voltage (Max Rds On,Min Rds On)
  • 10V
  • Vgs (Max)
  • ±30V
  • Continuous Drain Current (ID)
  • 11A
  • Gate to Source Voltage (Vgs)
  • 30V
  • Drain-source On Resistance-Max
  • 0.399Ohm
  • Pulsed Drain Current-Max (IDM)
  • 45A
  • DS Breakdown Voltage-Min
  • 600V
  • RoHS Status
  • RoHS Compliant

Download datasheets and manufacturer documentation for AOS AOD11S60.

Datasheets:

AOD11S60 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 545pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 11A continuous drain current (ID).Peak drain current is 45A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 600V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

AOD11S60 Features


a continuous drain current (ID) of 11A
based on its rated peak drain current 45A.
a 600V drain to source voltage (Vdss)


AOD11S60 Applications


There are a lot of Alpha & Omega Semiconductor Inc.
AOD11S60 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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Step2：Desiccant Protection

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Step3：Vacuum Packaging

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Step4：Individual Package

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2. For in-stock parts, orders normally could be shipped out within 1-2days.

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