AOS AOB25S65L

Manufacturer No:

AOB25S65L

Manufacturer:

AOS

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 190m ? @ 12.5A, 10V ±30V 1278pF @ 100V 26.4nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Quantity:

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AOB25S65L information

AOS AOB25S65L technical specifications, attributes, parameters and parts with similar specifications to AOS AOB25S65L.

Type
Parameter

Factory Lead Time
18 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
aMOS?

Published
2011

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

JESD-30 Code
R-PSSO-G2

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
357W Tc

Operating Mode
ENHANCEMENT MODE

Case Connection
DRAIN

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
190m ? @ 12.5A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
1278pF @ 100V

Current - Continuous Drain (Id) @ 25°C
25A Tc

Gate Charge (Qg) (Max) @ Vgs
26.4nC @ 10V

Drain to Source Voltage (Vdss)
650V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±30V

Continuous Drain Current (ID)
25A

Drain-source On Resistance-Max
0.19Ohm

Pulsed Drain Current-Max (IDM)
104A

DS Breakdown Voltage-Min
650V

Avalanche Energy Rating (Eas)
750 mJ

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for AOS AOB25S65L.

Datasheets:

alphaomegasemiconductor-aob25s65l-datasheets-2489.pdf

AOB25S65L Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1278pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 25A.Peak drain current for this device is 104A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 650V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 650V.Using drive voltage (10V) reduces this device's overall power consumption.

AOB25S65L Features

the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 25A
based on its rated peak drain current 104A.
a 650V drain to source voltage (Vdss)

AOB25S65L Applications

There are a lot of Alpha & Omega Semiconductor Inc.
AOB25S65L applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

User Guide

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Step2：Desiccant Protection

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.