

AOS AOB12T60PL
Manufacturer No:
AOB12T60PL
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 520m ? @ 6A, 10V ±30V 2028pF @ 100V 50nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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AOB12T60PL information
AOS AOB12T60PL technical specifications, attributes, parameters and parts with similar specifications to AOS AOB12T60PL.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2011
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSSO-G2
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 250W Tc
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- DRAIN
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 520m ? @ 6A, 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 2028pF @ 100V
- Current - Continuous Drain (Id) @ 25°C
- 12A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 50nC @ 10V
- Drain to Source Voltage (Vdss)
- 600V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±30V
- Continuous Drain Current (ID)
- 12A
- Drain-source On Resistance-Max
- 0.52Ohm
- Pulsed Drain Current-Max (IDM)
- 48A
- DS Breakdown Voltage-Min
- 600V
- Avalanche Energy Rating (Eas)
- 750 mJ
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for AOS AOB12T60PL.
AOB12T60PL Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 750 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2028pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 12A.Peak drain current for this device is 48A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
AOB12T60PL Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 12A
based on its rated peak drain current 48A.
a 600V drain to source voltage (Vdss)
AOB12T60PL Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOB12T60PL applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
User Guide
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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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AOB12T60PL Relevant information
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)