AOS AO3419

Manufacturer No:

AO3419

Manufacturer:

AOS

Package:

TO-236-3, SC-59, SOT-23-3

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 85m ? @ 3.5A, 10V ±12V 400pF @ 10V 4.4nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3

Quantity:

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AO3419 information

AOS AO3419 technical specifications, attributes, parameters and parts with similar specifications to AOS AO3419.

Type
Parameter

Factory Lead Time
18 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2009

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Pin Count
3

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Number of Channels
1

Power Dissipation-Max
1.4W Ta

Operating Mode
ENHANCEMENT MODE

Power Dissipation
1.4W

Turn On Delay Time
11 ns

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
85m ? @ 3.5A, 10V

Vgs(th) (Max) @ Id
1.4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
400pF @ 10V

Current - Continuous Drain (Id) @ 25°C
3.5A Ta

Gate Charge (Qg) (Max) @ Vgs
4.4nC @ 4.5V

Drain to Source Voltage (Vdss)
20V

Drive Voltage (Max Rds On,Min Rds On)
1.8V 10V

Vgs (Max)
±12V

Turn-Off Delay Time
22 ns

Continuous Drain Current (ID)
-3.5A

Threshold Voltage
-500mV

Gate to Source Voltage (Vgs)
12V

Drain-source On Resistance-Max
0.075Ohm

Drain to Source Breakdown Voltage
-20V

Max Junction Temperature (Tj)
150°C

Height
1.25mm

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for AOS AO3419.

AO3419 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 400pF @ 10V.This device conducts a continuous drain current (ID) of -3.5A, which is the maximum continuous current transistor can conduct.Using VGS=-20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 22 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.Activation of any electrical operation happens at threshold voltage, and this transistor has -500mV threshold voltage.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 10V volts (1.8V 10V).

AO3419 Features

a continuous drain current (ID) of -3.5A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 22 ns
a threshold voltage of -500mV
a 20V drain to source voltage (Vdss)

AO3419 Applications

There are a lot of Alpha & Omega Semiconductor Inc.
AO3419 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

User Guide

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