Texas Instruments 5962R2220103VXC
Manufacturer No:
5962R2220103VXC
Manufacturer:
Texas Instruments
Package:
Description:
Radiation-hardened, QMLV 22V half-bridge GaN gate driver
Quantity:
In Stock :9715
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Date Code：Within 2 Years
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5962R2220103VXC Information
Texas Instruments 5962R2220103VXC technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments 5962R2220103VXC.
- Type
- Parameter
- Bootstrap supply voltage (max) (V)
- 22
- Power switch
- GaNFET
- Input supply voltage (min) (V)
- 10
- Input supply voltage (max) (V)
- 16
- Peak output current (A)
- 1.3
- Operating temperature range (°C)
- -55 to 125
- Undervoltage lockout (typ) (V)
- 8
- Rating
- Space
- Propagation delay time (µs)
- 0.035
- Rise time (ns)
- 0.4
- Type
- Parameter
- Fall time (ns)
- 4
- Iq (mA)
- 0.5
- Input threshold
- TTL
- Channel input logic
- TTL/PWM
- Features
- Dead time control, Interlock, Internal LDO
- Driver configuration
- Half bridge
- Package
- CFP (HBX)
- Pins
- 48
- Size
- 468.72 mm² 16.74 x 28
- REACH Status
- Yes
Download datasheets and manufacturer documentation for Texas Instruments 5962R2220103VXC.
Data sheet:
Selection guide:
More literature:
Radiation & reliability report:
Application brief:
Application note:
Technical article:
The TPS7H60x3-SP series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency applications. The series consists of the TPS7H6003-SP (200V rating), TPS7H6013-SP (60V rating), and the TPS7H6023-SP (22V rating). The drivers feature adjustable dead time capability, small 30ns propagation delay, and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x3-SP drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.
The TPS7H60x3-SP drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.
The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.
- Radiation Performance:
- Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
- Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
- Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
- 1.3A peak source, 2.5A peak sink current
- Two operational modes:
- Single PWM input with adjustable dead time
- Two independent inputs
- Selectable input interlock protection in independent input mode
- Split outputs for adjustable turn-on and turn-off times
- 30ns typical propagation delay in independent input mode
- 5.5ns typical delay matching
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