Parallax 500-00001

Manufacturer No:

500-00001

Manufacturer:

Parallax

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Description:

NPN -55°C~150°C TJ 50nA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole

Quantity:

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In Stock :Available

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500-00001 information

Parallax 500-00001 technical specifications, attributes, parameters and parts with similar specifications to Parallax 500-00001.

Type
Parameter

Factory Lead Time
3 Weeks

Mounting Type
Through Hole

Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Weight
453.59237mg

Operating Temperature
-55°C~150°C TJ

Published
2016

Part Status
Active

Max Power Dissipation
1.5W

Element Configuration
Single

Gain Bandwidth Product
250MHz

Transistor Type
NPN

Collector Emitter Voltage (VCEO)
40V

DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V

Current - Collector Cutoff (Max)
50nA

Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA

Current - Collector (Ic) (Max)
200mA

Collector Emitter Saturation Voltage
200mV

Frequency - Transition
300MHz

Collector Base Voltage (VCBO)
60V

Emitter Base Voltage (VEBO)
6V

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for Parallax 500-00001.

Datasheets:

parallaxinc-50000001-datasheets-4572.pdf

500-00001 Overview

DC current gain in this device equals 100 @ 10mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.

500-00001 Features

the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V

500-00001 Applications

There are a lot of Parallax Inc.
500-00001 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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