ST 2STR2160
Manufacturer No:
2STR2160
Manufacturer:
ST
Package:
ROHS COMPLIANT, PLASTIC PACKAGE-3
Description:
Low voltage fast-switching PNP power transistor
Quantity:
In Stock :3970
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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3. It may cost additional remote fees for delivery if you are in a remote area.
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
2STR2160 Information
ST 2STR2160 technical specifications, attributes, parameters and parts with similar specifications to ST 2STR2160.
- Type
- Parameter
- RoHS Status
- RoHS Compliant
- Part Life Cycle Code
- Active
- Ihs Manufacturer
- STMICROELECTRONICS
- Package Description
- ROHS COMPLIANT, PLASTIC PACKAGE-3
- Pin Count
- 3
- Reach Compliance Code
- compliant
- ECCN Code
- EAR99
- Factory Lead Time
- 29 Weeks, 4 Days
- Samacsys Manufacturer
- STMicroelectronics
- Collector Current-Max (IC)
- 1 A
- Type
- Parameter
- Collector-Emitter Voltage-Max
- 60 V
- Configuration
- SINGLE
- DC Current Gain-Min (hFE)
- 45
- JESD-30 Code
- R-PDSO-G3
- JESD-609 Code
- e3
- Moisture Sensitivity Level
- 1
- Number of Elements
- 1
- Number of Terminals
- 3
- Operating Temperature-Max
- 150 °C
- Package Body Material
- PLASTIC/EPOXY
Download datasheets and manufacturer documentation for ST 2STR2160.
Datasheets:
2STR2160 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -260mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 480mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
2STR2160 Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 480mV @ 100mA, 1A
the emitter base voltage is kept at 5V
2STR2160 Applications
There are a lot of STMicroelectronics
2STR2160 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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