ST 2STR1160
Manufacturer No:
2STR1160
Manufacturer:
ST
Package:
TO-236-3, SC-59, SOT-23-3
Description:
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
Quantity:
In Stock :7114
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
2STR1160 Information
ST 2STR1160 technical specifications, attributes, parameters and parts with similar specifications to ST 2STR1160.
- Type
- Parameter
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Termination
- SMD/SMT
- ECCN Code
- EAR99
- Subcategory
- Other Transistors
- Max Power Dissipation
- 500mW
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 210
- Base Part Number
- 2STR
Download datasheets and manufacturer documentation for ST 2STR1160.
2STR1160 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 430mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 430mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
2STR1160 Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 430mV @ 100mA, 1A
the emitter base voltage is kept at 5V
2STR1160 Applications
There are a lot of STMicroelectronics
2STR1160 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
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