Renesas 2SK4151TZ-E

Manufacturer No:

2SK4151TZ-E

Manufacturer:

Renesas

Package:

TO-226-3, TO-92-3 (TO-226AA)

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.95 ? @ 500mA, 4V ±10V 98pF @ 10V 3.5nC @ 4V 150V TO-226-3, TO-92-3 (TO-226AA)

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2SK4151TZ-E information

Renesas 2SK4151TZ-E technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SK4151TZ-E.

Type
Parameter

Factory Lead Time
16 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-226-3, TO-92-3 (TO-226AA)

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tape & Reel (TR)

Published
2010

Pbfree Code
yes

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Technology
MOSFET (Metal Oxide)

Terminal Position
BOTTOM

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Pin Count
3

Qualification Status
Not Qualified

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
750mW Ta

Operating Mode
ENHANCEMENT MODE

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
1.95 ? @ 500mA, 4V

Input Capacitance (Ciss) (Max) @ Vds
98pF @ 10V

Current - Continuous Drain (Id) @ 25°C
1A Ta

Gate Charge (Qg) (Max) @ Vgs
3.5nC @ 4V

Rise Time
12ns

Drain to Source Voltage (Vdss)
150V

Drive Voltage (Max Rds On,Min Rds On)
2.5V 4V

Vgs (Max)
±10V

Fall Time (Typ)
19 ns

Turn-Off Delay Time
34 ns

Continuous Drain Current (ID)
1A

Gate to Source Voltage (Vgs)
10V

Drain-source On Resistance-Max
0.0025Ohm

Pulsed Drain Current-Max (IDM)
4A

DS Breakdown Voltage-Min
150V

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for Renesas 2SK4151TZ-E.

Datasheets:

renesaselectronicsamerica-2sk4151tze-datasheets-0938.pdf

ConflictMineralStatement:

nec-dn1c100m1s-conflictmineralstatement-8243.pdf

2SK4151TZ-E Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 98pF @ 10V.This device has a continuous drain current (ID) of [1A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 34 ns.A maximum pulsed drain current of 4A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4V).

2SK4151TZ-E Features

a continuous drain current (ID) of 1A
the turn-off delay time is 34 ns
based on its rated peak drain current 4A.
a 150V drain to source voltage (Vdss)

2SK4151TZ-E Applications

There are a lot of Renesas Electronics America
2SK4151TZ-E applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

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