ONSEMI 2SK4117LS
Manufacturer No:
2SK4117LS
Manufacturer:
ONSEMI
Package:
TO-220-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Bulk 420m ? @ 7.5A, 10V ±30V 755pF @ 30V 30.6nC @ 10V TO-220-3 Full Pack
Quantity:
In Stock :2030
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Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 16 - Wed, Jun 17, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
2SK4117LS Information
ONSEMI 2SK4117LS technical specifications, attributes, parameters and parts with similar specifications to ONSEMI 2SK4117LS.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Published
- 2007
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- Terminal Finish
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Additional Feature
- HIGH RELIABILITY
- HTS Code
- 8541.29.00.95
- Technology
- MOSFET (Metal Oxide)
- Pin Count
- 3
- Number of Elements
- 1
- Power Dissipation-Max
- 2W Ta 35W Tc
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
Download datasheets and manufacturer documentation for ONSEMI 2SK4117LS.
Datasheets:
ReachStatement:
2SK4117LS Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 296 mJ.A device's maximum input capacitance is 755pF @ 30V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=400V, and this device has a drain-to-source breakdown voltage of 400V voltage.Its drain current is 10.4A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 101 ns.Its maximum pulsed drain current is 47A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
2SK4117LS Features
the avalanche energy rating (Eas) is 296 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 101 ns
based on its rated peak drain current 47A.
2SK4117LS Applications
There are a lot of ON Semiconductor
2SK4117LS applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
