Renesas 2SK4093TZ-E

Manufacturer No:

2SK4093TZ-E

Manufacturer:

Renesas

Package:

TO-226-3, TO-92-3 Long Body

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.6 ? @ 500mA, 4V ±10V 140pF @ 25V 5.5nC @ 4V 250V TO-226-3, TO-92-3 Long Body

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2SK4093TZ-E information

Renesas 2SK4093TZ-E technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SK4093TZ-E.

Type
Parameter

Factory Lead Time
16 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-226-3, TO-92-3 Long Body

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tape & Reel (TR)

Published
2008

Pbfree Code
yes

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
BOTTOM

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Pin Count
3

Qualification Status
Not Qualified

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
900mW Ta

Turn On Delay Time
14 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
2.6 ? @ 500mA, 4V

Input Capacitance (Ciss) (Max) @ Vds
140pF @ 25V

Current - Continuous Drain (Id) @ 25°C
1A Ta

Gate Charge (Qg) (Max) @ Vgs
5.5nC @ 4V

Rise Time
17ns

Drain to Source Voltage (Vdss)
250V

Drive Voltage (Max Rds On,Min Rds On)
2.5V 4V

Vgs (Max)
±10V

Fall Time (Typ)
16 ns

Turn-Off Delay Time
46 ns

Continuous Drain Current (ID)
1A

Gate to Source Voltage (Vgs)
10V

Drain Current-Max (Abs) (ID)
1A

Drain-source On Resistance-Max
2.7Ohm

DS Breakdown Voltage-Min
250V

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for Renesas 2SK4093TZ-E.

Datasheets:

renesaselectronicsamerica-2sk4093tze-datasheets-0923.pdf

ConflictMineralStatement:

nec-dn1c100m1s-conflictmineralstatement-8243.pdf

2SK4093TZ-E Overview

The maximum input capacitance of this device is 140pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1A.As shown in the table below, the drain current of this device is 1A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 46 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 250V.The drain-to-source voltage (Vdss) of this transistor needs to be at 250V in order to operate.Using drive voltage (2.5V 4V), this device helps reduce its power consumption.

2SK4093TZ-E Features

a continuous drain current (ID) of 1A
the turn-off delay time is 46 ns
a 250V drain to source voltage (Vdss)

2SK4093TZ-E Applications

There are a lot of Renesas Electronics America
2SK4093TZ-E applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

User Guide

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