Renesas 2SK3484-AZ
Manufacturer No:
2SK3484-AZ
Manufacturer:
Package:
TO-251-3 Short Leads, IPak, TO-251AA
Description:
MOSFET (Metal Oxide) N-Channel Bulk 125m ? @ 8A, 10V ±20V 900pF @ 10V 20nC @ 10V 100V TO-251-3 Short Leads, IPak, TO-251AA
Quantity:
Delivery:
Payment:
In Stock :Available
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2SK3484-AZ information
Renesas 2SK3484-AZ technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SK3484-AZ.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Contact Plating
- Tin
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Published
- 2006
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- HTS Code
- 8541.29.00.95
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
- JESD-30 Code
- R-PSIP-T3
- Qualification Status
- Not Qualified
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- DRAIN
- Turn On Delay Time
- 9 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 125m ? @ 8A, 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 900pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 16A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 20nC @ 10V
- Rise Time
- 5ns
- Drain to Source Voltage (Vdss)
- 100V
- Drive Voltage (Max Rds On,Min Rds On)
- 4.5V 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 4 ns
- Turn-Off Delay Time
- 30 ns
- Continuous Drain Current (ID)
- 16A
- Gate to Source Voltage (Vgs)
- 20V
- Drain-source On Resistance-Max
- 0.148Ohm
- DS Breakdown Voltage-Min
- 100V
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for Renesas 2SK3484-AZ.
ConflictMineralStatement:
2SK3484-AZ Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 900pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 30 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
2SK3484-AZ Features
a continuous drain current (ID) of 16A
the turn-off delay time is 30 ns
a 100V drain to source voltage (Vdss)
2SK3484-AZ Applications
There are a lot of Renesas Electronics America
2SK3484-AZ applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
User Guide
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