Renesas 2SK3483-AZ

Manufacturer No:

2SK3483-AZ

Manufacturer:

Renesas

Package:

TO-251-3 Short Leads, IPak, TO-251AA

Description:

MOSFET (Metal Oxide) N-Channel Bulk 52m ? @ 14A, 10V ±20V 2300pF @ 10V 49nC @ 10V 100V TO-251-3 Short Leads, IPak, TO-251AA

Quantity:

Delivery:

Payment:

In Stock :Available

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2SK3483-AZ information

Renesas 2SK3483-AZ technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SK3483-AZ.

Type
Parameter

Factory Lead Time
16 Weeks

Contact Plating
Tin

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Bulk

Published
2006

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

HTS Code
8541.29.00.95

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Peak Reflow Temperature (Cel)
260

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Pin Count
3

JESD-30 Code
R-PSIP-T3

Qualification Status
Not Qualified

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Operating Mode
ENHANCEMENT MODE

Case Connection
DRAIN

Turn On Delay Time
12 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
52m ? @ 14A, 10V

Input Capacitance (Ciss) (Max) @ Vds
2300pF @ 10V

Current - Continuous Drain (Id) @ 25°C
28A Ta

Gate Charge (Qg) (Max) @ Vgs
49nC @ 10V

Rise Time
9ns

Drain to Source Voltage (Vdss)
100V

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

Fall Time (Typ)
5 ns

Turn-Off Delay Time
53 ns

Continuous Drain Current (ID)
28A

Gate to Source Voltage (Vgs)
20V

Drain-source On Resistance-Max
0.059Ohm

DS Breakdown Voltage-Min
100V

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for Renesas 2SK3483-AZ.

Datasheets:

renesaselectronicsamerica-2sk3483az-datasheets-4391.pdf

ConflictMineralStatement:

nec-dn1c100m1s-conflictmineralstatement-8243.pdf

2SK3483-AZ Overview

An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2300pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 28A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 53 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

2SK3483-AZ Features

a continuous drain current (ID) of 28A
the turn-off delay time is 53 ns
a 100V drain to source voltage (Vdss)

2SK3483-AZ Applications

There are a lot of Renesas Electronics America
2SK3483-AZ applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

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