Renesas 2SK3481-AZ
Manufacturer No:
2SK3481-AZ
Manufacturer:
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Bulk 50m ? @ 15A, 10V ±20V 2300pF @ 10V 48nC @ 10V 100V TO-220-3
Quantity:
Delivery:
Payment:
In Stock :Available
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2SK3481-AZ information
Renesas 2SK3481-AZ technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SK3481-AZ.
- Type
- Parameter
- Contact Plating
- Tin
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Published
- 2002
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- 260
- Pin Count
- 3
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 1.5W Ta 56W Tc
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 1.5W
- Case Connection
- DRAIN
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 50m ? @ 15A, 10V
- Input Capacitance (Ciss) (Max) @ Vds
- 2300pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 30A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 48nC @ 10V
- Rise Time
- 10ns
- Drain to Source Voltage (Vdss)
- 100V
- Drive Voltage (Max Rds On,Min Rds On)
- 4.5V 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 5 ns
- Turn-Off Delay Time
- 53 ns
- Continuous Drain Current (ID)
- 30A
- JEDEC-95 Code
- TO-220AB
- Gate to Source Voltage (Vgs)
- 20V
- Drain-source On Resistance-Max
- 0.058Ohm
- Pulsed Drain Current-Max (IDM)
- 60A
- Avalanche Energy Rating (Eas)
- 68 mJ
- RoHS Status
- RoHS Compliant
- Radiation Hardening
- No
Download datasheets and manufacturer documentation for Renesas 2SK3481-AZ.
ConflictMineralStatement:
2SK3481-AZ Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 68 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2300pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 53 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 60A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
2SK3481-AZ Features
the avalanche energy rating (Eas) is 68 mJ
a continuous drain current (ID) of 30A
the turn-off delay time is 53 ns
based on its rated peak drain current 60A.
a 100V drain to source voltage (Vdss)
2SK3481-AZ Applications
There are a lot of Renesas Electronics America
2SK3481-AZ applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
User Guide
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