2SK2503TL-ROHM-Price, Stock & Datasheet

2SK2503TL Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 520pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 50 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 20A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4V 10V), this device helps reduce its overall power consumption.

2SK2503TL Features

a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 20A.