Renesas 2SK1859-E
Renesas 2SK1859-E

Renesas 2SK1859-E

Manufacturer No:

2SK1859-E

Manufacturer:

Renesas

Package:

TO-3P-3, SC-65-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 3 ? @ 3A, 10V ±30V 980pF @ 10V 900V TO-3P-3, SC-65-3

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

Price not displayed? Please send an RFQ, and we will respond immediately.

2SK1859-E information

Renesas 2SK1859-E technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SK1859-E.

  • Type
  • Parameter
  • Factory Lead Time
  • 16 Weeks
  • Contact Plating
  • Copper, Gold, Tin
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-3P-3, SC-65-3
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Tube
  • Published
  • 2004
  • JESD-609 Code
  • e2
  • Pbfree Code
  • yes
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Tin/Copper (Sn/Cu)
  • Subcategory
  • FET General Purpose Power
  • Technology
  • MOSFET (Metal Oxide)
  • Terminal Position
  • SINGLE
  • Pin Count
  • 3
  • Number of Elements
  • 1
  • Configuration
  • SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
  • 60W Tc
  • Case Connection
  • ISOLATED
  • Turn On Delay Time
  • 20 ns
  • FET Type
  • N-Channel
  • Transistor Application
  • SWITCHING
  • Rds On (Max) @ Id, Vgs
  • 3 ? @ 3A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds
  • 980pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
  • 6A Ta
  • Rise Time
  • 80ns
  • Drain to Source Voltage (Vdss)
  • 900V
  • Drive Voltage (Max Rds On,Min Rds On)
  • 10V
  • Vgs (Max)
  • ±30V
  • Fall Time (Typ)
  • 100 ns
  • Turn-Off Delay Time
  • 125 ns
  • Continuous Drain Current (ID)
  • 6A
  • Gate to Source Voltage (Vgs)
  • 30V
  • Drain Current-Max (Abs) (ID)
  • 6A
  • Drain-source On Resistance-Max
  • 3Ohm
  • DS Breakdown Voltage-Min
  • 900V
  • Radiation Hardening
  • No
  • RoHS Status
  • RoHS Compliant

Download datasheets and manufacturer documentation for Renesas 2SK1859-E.

Datasheets:

ConflictMineralStatement:

2SK1859-E Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 980pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 125 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 900V.For this transistor to work, a voltage 900V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

2SK1859-E Features


a continuous drain current (ID) of 6A
the turn-off delay time is 125 ns
a 900V drain to source voltage (Vdss)


2SK1859-E Applications


There are a lot of Renesas Electronics America
2SK1859-E applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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