Renesas 2SK1835-E
Manufacturer No:
2SK1835-E
Manufacturer:
Package:
TO-3P-3, SC-65-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 7 ? @ 2A, 15V ±20V 1700pF @ 10V 1500V TO-3P-3, SC-65-3
Quantity:
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2SK1835-E information
Renesas 2SK1835-E technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SK1835-E.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Contact Plating
- Copper, Tin
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3, SC-65-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Published
- 2008
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Pin Count
- 4
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 125W Tc
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- DRAIN
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 7 ? @ 2A, 15V
- Input Capacitance (Ciss) (Max) @ Vds
- 1700pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 4A Ta
- Rise Time
- 80ns
- Drain to Source Voltage (Vdss)
- 1500V
- Drive Voltage (Max Rds On,Min Rds On)
- 15V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 80 ns
- Turn-Off Delay Time
- 230 ns
- Continuous Drain Current (ID)
- 4A
- Gate to Source Voltage (Vgs)
- 20V
- Drain Current-Max (Abs) (ID)
- 4A
- Drain-source On Resistance-Max
- 7Ohm
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for Renesas 2SK1835-E.
Datasheets:
ConflictMineralStatement:
2SK1835-E Overview
A device's maximum input capacitance is 1700pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 4A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 230 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 1500V drain to source voltage (Vdss).This device uses no drive voltage (15V) to reduce its overall power consumption.
2SK1835-E Features
a continuous drain current (ID) of 4A
the turn-off delay time is 230 ns
a 1500V drain to source voltage (Vdss)
2SK1835-E Applications
There are a lot of Renesas Electronics America
2SK1835-E applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

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Step6:Packaging Box
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