Renesas 2SK1342-E

Manufacturer No:

2SK1342-E

Manufacturer:

Renesas

Package:

TO-3P-3, SC-65-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 1.6 ? @ 4A, 10V ±30V 1730pF @ 10V 900V TO-3P-3, SC-65-3

Quantity:

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In Stock :Available

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2SK1342-E information

Renesas 2SK1342-E technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SK1342-E.

Type
Parameter

Factory Lead Time
16 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-3P-3, SC-65-3

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tube

Published
2005

JESD-609 Code
e2

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Tin/Copper (Sn/Cu)

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Pin Count
4

Qualification Status
Not Qualified

Number of Elements
1

Power Dissipation-Max
100W Tc

Operating Mode
ENHANCEMENT MODE

Case Connection
DRAIN

Turn On Delay Time
25 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
1.6 ? @ 4A, 10V

Input Capacitance (Ciss) (Max) @ Vds
1730pF @ 10V

Current - Continuous Drain (Id) @ 25°C
8A Ta

Rise Time
135ns

Drain to Source Voltage (Vdss)
900V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±30V

Fall Time (Typ)
130 ns

Turn-Off Delay Time
185 ns

Continuous Drain Current (ID)
8A

Gate to Source Voltage (Vgs)
30V

Drain Current-Max (Abs) (ID)
8A

Pulsed Drain Current-Max (IDM)
20A

DS Breakdown Voltage-Min
900V

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for Renesas 2SK1342-E.

Datasheets:

renesaselectronicsamerica-2sk1342e-datasheets-0905.pdf

ConflictMineralStatement:

nec-dn1c100m1s-conflictmineralstatement-8243.pdf

2SK1342-E Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1730pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 8A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 185 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 20A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 900V in order to maintain normal operation.Operating this transistor requires a 900V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

2SK1342-E Features

a continuous drain current (ID) of 8A
the turn-off delay time is 185 ns
based on its rated peak drain current 20A.
a 900V drain to source voltage (Vdss)

2SK1342-E Applications

There are a lot of Renesas Electronics America
2SK1342-E applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

User Guide

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