Renesas 2SJ687-ZK-E1-AY

Manufacturer No:

2SJ687-ZK-E1-AY

Manufacturer:

Renesas

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 7m ? @ 10A, 4.5V ±12V 4400pF @ 10V 57nC @ 4.5V 20V TO-252-3, DPak (2 Leads + Tab), SC-63

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2SJ687-ZK-E1-AY information

Renesas 2SJ687-ZK-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SJ687-ZK-E1-AY.

Type
Parameter

Contact Plating
Tin

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tape & Reel (TR)

Published
2007

JESD-609 Code
e3

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Subcategory
Other Transistors

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Pin Count
3

JESD-30 Code
R-PSSO-G2

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
1W Ta 36W Tc

Operating Mode
ENHANCEMENT MODE

Power Dissipation
1W

Turn On Delay Time
36 ns

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
7m ? @ 10A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds
4400pF @ 10V

Current - Continuous Drain (Id) @ 25°C
20A Tc

Gate Charge (Qg) (Max) @ Vgs
57nC @ 4.5V

Rise Time
220ns

Drain to Source Voltage (Vdss)
20V

Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V

Vgs (Max)
±12V

Polarity/Channel Type
N-CHANNEL

Fall Time (Typ)
310 ns

Turn-Off Delay Time
270 ns

Continuous Drain Current (ID)
20A

JEDEC-95 Code
TO-252AA

Gate to Source Voltage (Vgs)
12V

Drain Current-Max (Abs) (ID)
0.02A

Drain-source On Resistance-Max
0.02Ohm

DS Breakdown Voltage-Min
20V

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for Renesas 2SJ687-ZK-E1-AY.

Datasheets:

renesaselectronicsamerica-2sj687zke1ay-datasheets-4588.pdf

ConflictMineralStatement:

nec-dn1c100m1s-conflictmineralstatement-8243.pdf

2SJ687-ZK-E1-AY Overview

An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4400pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 20A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 0.02A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 270 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 36 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.Normal operation requires that the DS breakdown voltage remain above 20V.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.

2SJ687-ZK-E1-AY Features

a continuous drain current (ID) of 20A
the turn-off delay time is 270 ns
a 20V drain to source voltage (Vdss)

2SJ687-ZK-E1-AY Applications

There are a lot of Renesas Electronics America
2SJ687-ZK-E1-AY applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

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